Characterisation of a GaAs MESFET oscillator at 4.2 K
β Scribed by Vollmer, E.; Gutmann, P.; Niemeyer, J.
- Book ID
- 125509337
- Publisher
- IEEE
- Year
- 1993
- Tongue
- English
- Weight
- 383 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1051-8223
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A 10.6 GHz hybrid superconducting film/GaAs-MESFET microwave oscillator has been designed, fabricated and characterized on a 10 mm x 15 mm LaAIO, substrate. The oscillator was a reflection mode type using a GaAs MESFET (NE720841 as the active device and a superconducting microstrip resonator as the
## Abstract An __X__βband HEMT oscillator is designed and tested at the cryogenic temperature of liquid helium. The designed oscillator has a directly coupled port in addition to an output port to obtain circuit simplicity. For the novel oscillator configuration, an analytic design formula of the f
A numerical model of the trans¨erse propagation delays in a GaAs MESFET is presented. This model allows for ramp input signals, considers the resistance of the dri¨ing source, and includes more accurate ¨alues of the MESFET parameters. The model has been used to study the dependence of these delays