A hybrid superconductor/GaAs-MESFET microwave oscillator at 10.6 GHz

✍ Scribed by B.B. Jin; R.X. Wu; L. Kang; Q.H. Cheng; P.H. Wu; D. Jing; K. Shao; M.M. Jiang; J.Z. Zhang; M.S. Sun; Y.Y. Wang; Y.L. Zhou; H.B. Lu; S.F. Xu; M. He

• Book ID: 104111212
• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 273 KB
• Volume: 36
• Category: Article
• ISSN: 0011-2275
• DOI: 10.1016/s0011-2275(96)00081-1

✦ Synopsis

A 10.6 GHz hybrid superconducting film/GaAs-MESFET microwave oscillator has been designed, fabricated and characterized on a 10 mm x 15 mm LaAIO, substrate. The oscillator was a reflection mode type using a GaAs MESFET (NE720841 as the active device and a superconducting microstrip resonator as the frequency stabilizing element. By improving the unloaded quality factor of the superconducting microstrip resonator and adjusting coupling coefficient between the resonator and the MESFET, the phase noise of the oscillator was decreased. At 77 K, the phase noise of the oscillator at 10 KHz offset from carrier was -87 dBc/Hz.