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Characterisation and simulation of a single-sided, n+ on n silicon microstrip detector before and after neutron irradiation

✍ Scribed by M.M Angarano; A Báder; D Creanza; M de Palma; L Fiore; G Maggi; S My; G Raso; G Selvaggi; P Tempesta


Book ID
118569275
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
457 KB
Volume
428
Category
Article
ISSN
0168-9002

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Study of the annealing effect on silicon
✍ D. Creanza; D. Giordano; M. de Palma; L. Fiore; N. Manna; S. My; V. Radicci; P. 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 845 KB

The behaviour of the leakage current, interstrip resistance and capacitance have been studied on silicon microstrip detectors during an annealing period equivalent to C10 8 min at room temperature, after 34 MeV proton irradiation. A comparison between samples of the same geometry built on /1 0 0S an