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Beam test results on n+-on-n type silicon microstrip detectors before and after neutron irradiation

✍ Scribed by M.M. Angarano; A. Báder; D. Creanza; M. de Palma; L. Fiore; G. Maggi; S. My; V. Radicci; G. Raso; G. Selvaggi; L. Silvestris; P. Tempesta; S. Albergo; R. Potenza

Book ID
108415567
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
471 KB
Volume
440
Category
Article
ISSN
0168-9002

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Study of the annealing effect on silicon microstrip detectors built on 〈1 1 1〉 and 〈1 0 0〉 substrates after 34 MeV proton irradiation
✍ D. Creanza; D. Giordano; M. de Palma; L. Fiore; N. Manna; S. My; V. Radicci; P. 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 845 KB

The behaviour of the leakage current, interstrip resistance and capacitance have been studied on silicon microstrip detectors during an annealing period equivalent to C10 8 min at room temperature, after 34 MeV proton irradiation. A comparison between samples of the same geometry built on /1 0 0S an