Study of the annealing effect on silicon
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D. Creanza; D. Giordano; M. de Palma; L. Fiore; N. Manna; S. My; V. Radicci; P.
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Article
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2004
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Elsevier Science
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English
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The behaviour of the leakage current, interstrip resistance and capacitance have been studied on silicon microstrip detectors during an annealing period equivalent to C10 8 min at room temperature, after 34 MeV proton irradiation. A comparison between samples of the same geometry built on /1 0 0S an