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Characterisation and modelling of SIPOS on silicon planar devices

✍ Scribed by J.N. Sandoe; J.R. Hughes; J.A.G. Slatter

Publisher
Elsevier Science
Year
1985
Weight
300 KB
Volume
129
Category
Article
ISSN
0378-4363

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Silicon Coulomb blockade structures have been fabricated from silicon on insulator substrates and electrically characterised. The devices were realized as a single Si island connected to two electron reservoirs by Si tunnelling barriers. The silicon base substrate served as a backgate. Clear Coulomb