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Channeling ion beam induced crystalline quality improvement of epitaxial CeO2 films

✍ Scribed by Y Yamamoto; K Yamaguchi; M Taya; M Muraoka; M Satoh; T Inoue

Book ID
114170711
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
139 KB
Volume
148
Category
Article
ISSN
0168-583X

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## An anomalous behavior was observed in X-ray photoelectron Spectroscopy (XPS) depth profile measurements conducted on CeO/Si epilayers grown by ion beam epitaxy (IBE) : the signals of Ce3+ and Ce4+ co-exist, and the ratio between them increases during the etching time and then tends to maintain a