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Channeled ion implantation of as+ in silicon at 300°c

✍ Scribed by Galkin, G. N.; Dravin, V. A.; Epifanov, M. S.; Khamdokhov, Z. M.; Kulikauskas, V. S.

Book ID: 118140244
Publisher: Informa UK (Taylor & Francis)
Year: 1983
Weight: 456 KB
Volume: 77
Category: Article
ISSN: 0033-7579
DOI: 10.1080/00337578308224722

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