𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Changes in the electrical properties of thin-film capacitors during breakdown

✍ Scribed by G. A. Vorob'ev; V. A. Mukhachev


Book ID
112416204
Publisher
Springer
Year
1968
Tongue
English
Weight
227 KB
Volume
11
Category
Article
ISSN
1573-9228

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Electrical properties of Al-CeO2-Al thin
✍ Dr. M. Chandra Shekar; Dr. V. Hari Babu πŸ“‚ Article πŸ“… 1984 πŸ› John Wiley and Sons 🌐 English βš– 352 KB πŸ‘ 1 views

Ceriutii Oxide films were prepared by vaciiurii therinal evaporation from tantaluni hoat i n a conventional vacuum coating unit. Current-voltage characteristics were studied for different filni thicknesses. The breakdown voltage ( VB) arid dielectric field strength ( E B ) were calculated. It is fbu

Transients during pre-breakdown and hard
✍ S Lombardo; F Crupi; C Spinella; B Neri πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 939 KB

TimeΒ±resolved electrical measurements show transient phenomena occurring during degradation and intrinsic dielectric breakdown of gate oxide layers under constant voltage FowlerΒ±Nordheim stress. We have studied such transients in metal/oxide/semiconductor (MOS) capacitors with an n + poly-crystallin