Changes in the electrical properties of thin-film capacitors during breakdown
β Scribed by G. A. Vorob'ev; V. A. Mukhachev
- Book ID
- 112416204
- Publisher
- Springer
- Year
- 1968
- Tongue
- English
- Weight
- 227 KB
- Volume
- 11
- Category
- Article
- ISSN
- 1573-9228
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π SIMILAR VOLUMES
Ceriutii Oxide films were prepared by vaciiurii therinal evaporation from tantaluni hoat i n a conventional vacuum coating unit. Current-voltage characteristics were studied for different filni thicknesses. The breakdown voltage ( VB) arid dielectric field strength ( E B ) were calculated. It is fbu
TimeΒ±resolved electrical measurements show transient phenomena occurring during degradation and intrinsic dielectric breakdown of gate oxide layers under constant voltage FowlerΒ±Nordheim stress. We have studied such transients in metal/oxide/semiconductor (MOS) capacitors with an n + poly-crystallin