Electrical properties of Al-CeO2-Al thin film capacitor structures

✍ Scribed by Dr. M. Chandra Shekar; Dr. V. Hari Babu

• Publisher: John Wiley and Sons
• Year: 1984
• Tongue: English
• Weight: 352 KB
• Volume: 19
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.2170190919

✦ Synopsis

Ceriutii Oxide films were prepared by vaciiurii therinal evaporation from tantaluni hoat i n a conventional vacuum coating unit. Current-voltage characteristics were studied for different filni thicknesses. The breakdown voltage ( VB) arid dielectric field strength ( E B ) were calculated. It is fbund t h a t the breakdown voltage increases and dielectric field strength decreases as the thickness of the film increases. The applical,ility of Forlarii-Minnaja relation is discussed. Current-voltage characteristics were also drawn a t different ternperatures and breakdown voltages were calculated. The breakdown voltage decreases as t h e teinperature of the structure increases but the variation is nonlinear. The variation of current density with temperature was studied and the activation energy for the Iriigration of charge carriers was calciilated and i t is about 0.52 ev. The results were discussed.