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Change in stoichiometry of thin films of palladium chloride during ion beam analysis

✍ Scribed by J.L. Whitton; G. Sørensen; J.S. Williams


Publisher
Elsevier Science
Year
1978
Weight
311 KB
Volume
149
Category
Article
ISSN
0029-554X

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A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 lm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant ga