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Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si

โœ Scribed by L. Csepregi; J.W. Mayer; T.W. Sigmon


Publisher
Elsevier Science
Year
1975
Tongue
English
Weight
180 KB
Volume
54
Category
Article
ISSN
0375-9601

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Swift heavy ion beam induced recrystalli
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This paper focuses on the role of electronic energy loss in ion beam induced epitaxial crystallization for which swift heavy ions (100 MeV Ag 7+ ) have been used. We observed good epitaxial crystallization at 473-623 K, which is a much lower temperature regime as compared to the one needed for conve