✦ LIBER ✦

CdTe-GaAs(100) interface: MBE growth, rheed and XPS characterization

✍ Scribed by J.P. Faurie; C. Hsu; S. Sivananthan; X. Chu

Publisher: Elsevier Science
Year: 1986
Weight: 48 KB
Volume: 168
Category: Article
ISSN: 0167-2584
DOI: 10.1016/0167-2584(86)90467-6

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Surface characterization by RHEED techni

Surface characterization by RHEED techniques during MBE growth of GaAs and AlxGa1−xAs

✍ L. Däweritz 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 387 KB

Characterization of deep levels at GaAs/

Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique

✍ Kaniewska, M. ;Engström, O. ;Pacholak-Cybulska, M. ;Sadeghi, M. 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 263 KB

## Abstract In order to find the origin of crystalline defects occurring in the preparation of InAs/GaAs quantum dots (QDs), their appearance was tracked through three different sample types designed as Schottky diodes. Specimens with a GaAs cap layer on a GaAs buffer layer as well as with an InAs

Comparison of RHEED during MBE growth an

Comparison of RHEED during MBE growth and the quality of AlGaAs:Si grown on (100) and misoriented GaAs substrates

✍ H. Lee; N. Nouri; C. Colvard; D. Ackley 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 308 KB

The application of RHEED intensity effec

The application of RHEED intensity effects to interrupted growth and interface formation during MBE growth of GaAs/(Al, Ga)As structures

✍ B. A. Joyce; J. Zhang; J. H. Neave; P. J. Dobson 📂 Article 📅 1988 🏛 Springer 🌐 English ⚖ 481 KB

A combined computer simulation, RHEED in

A combined computer simulation, RHEED intensity dynamics and photoluminescence study of the surface kinetics controlled interface formation in MBE grown GaAs/AlxGa1−xAs(100) quantum well structures

✍ A. Madhukar; P. Chen; F. Voillot; M. Thomsen; J.Y. Kim; W.C. Tang; S.V. Ghaisas 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 707 KB