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Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate

โœ Scribed by Prinz, G.i M.; Ladenburger, A.; Schirra, M.; Feneberg, M.; Thonke, K.; Sauer, R.; Taniyasu, Y.; Kasu, M.; Makimoto, T.

Book ID
120187034
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
348 KB
Volume
101
Category
Article
ISSN
0021-8979

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Infrared reflectance analysis of GaN epi
Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates
โœ Z.C. Feng; T.R. Yang; Y.T. Hou ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 282 KB

Infrared reflectance (IR) of GaN grown on sapphire and silicon substrates has been studied both theoretically and experimentally. The theoretical calculation of the IR spectra is based on the transfer matrix method. The IR spectral characteristics influenced by several factors, such as film thicknes