## Abstract Infrared absorption of n‐type indium selenide is studied in the 2.5 to 50 μm spectral range at 300 °K. Lattice absorption peaks are observed between 25 and 50 μm. Tin‐doped samples with an electron concentration higher than 10^16^ cm^−3^ exhibit free carrier absorption for λ larger than
✦ LIBER ✦
Carrier scattering mechanisms in P-type indium selenide
✍ Scribed by A. Segura; C. Martinez-Tomás; A. Casanovas; A. Cantarero; J. Martinez-Pastor; A. Chevy
- Publisher
- Springer
- Year
- 1989
- Tongue
- English
- Weight
- 552 KB
- Volume
- 48
- Category
- Article
- ISSN
- 1432-0630
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Carrier Scattering Mechanisms in GaS 0.5 Se 0.5 Layered Crystals Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150-400 K on n-type GaS 0.5 Se 0.5 layered crystals. The analysis of temperature dependent electrical resistivity and