Carrier Scattering Mechanisms in GaS0.5Se0.5 Layered Crystals

✍ Scribed by A.F. Qasrawi; N.M. Gasanly

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 126 KB
• Volume: 37
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/1521-4079(200206)37:6<587::aid-crat587>3.0.co;2-z

✦ Synopsis

Carrier Scattering Mechanisms in GaS 0.5 Se 0.5 Layered Crystals Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150-400 K on n-type GaS 0.5 Se 0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4×10 17 and 4.1×10 16 cm -3 , respectively, and an electron effective mass of 0.41 m 0 . The Hall mobility is limited by the electron-phonon short-range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron-phonon short-range interactions scattering mobility analysis reveals an electron-phonon coupling c onstant of 0.25 and conduction band deformation potential of 5.57 eV/Å.