Carrier Scattering Mechanisms in GaS0.5S
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A.F. Qasrawi; N.M. Gasanly
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Article
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2002
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John Wiley and Sons
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English
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Carrier Scattering Mechanisms in GaS 0.5 Se 0.5 Layered Crystals Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150-400 K on n-type GaS 0.5 Se 0.5 layered crystals. The analysis of temperature dependent electrical resistivity and