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Carrier freezeout in n-on-p Hg0.7Cd0.3Te photodiode and acceptor level determination

✍ Scribed by J. Ren; G. Nimtz; J. Jakumeit; R. Wollrab


Publisher
Springer
Year
1997
Tongue
English
Weight
164 KB
Volume
65
Category
Article
ISSN
1432-0630

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Scanning electron microscopy images showed that the surface morphologies of in situ annealed Hg 0.7 Cd 0.3 Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy were mirror-like with no indication of pinholes. Selected area electron diffraction patterns and high-resolution transmi