✦ LIBER ✦

Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {1122} GaN pyramidal planes

✍ Scribed by Srinivasan, S.; Stevens, M.; Ponce, F. A.; Omiya, H.; Mukai, T.

Book ID: 127270240
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 401 KB
Volume: 89
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2397566

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Indium incorporation in InGaN/GaN quantu

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

✍ Lai, K. Y. ;Paskova, T. ;Wheeler, V. D. ;Chung, T. Y. ;Grenko, J. A. ;Johnson, M 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 372 KB

## Abstract InGaN/GaN quantum wells (QWs) grown at identical conditions on __m__‐plane GaN and __c__‐plane sapphire substrates were characterized by several techniques, aiming to clarify the reason for different emission wavelengths often observed in similar LED structures with __m__‐ and __c__‐pla

Effect of GaN cap thickness on carrier d

Effect of GaN cap thickness on carrier dynamics in InGaN quantum wells

✍ O. Kopylov; R. Shirazi; O. Svensk; S. Suihkonen; S. Sintonen; M. Sopanen; B. E. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 242 KB

Defect density dependence of carrier dyn

Defect density dependence of carrier dynamics in AlGaN multiple quantum wells grown on GaN substrates and templates

✍ G. A. Garrett; C. J. Collins; A. V. Sampath; H. Shen; M. Wraback; S. F. LeBoeuf; 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 170 KB

Proceedings of SPIE [SPIE Gallium Nitrid

Proceedings of SPIE [SPIE Gallium Nitride Materials and Devices VII - San Francisco, California, USA (Monday 23 January 2012)] - Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells

✍ Malinauskas, T.; Kadys, A.; Grinys, T.; Nargelas, S.; Aleksiejnas, R.; Miasojedo 📂 Article 📅 2012 🏛 SPIE ⚖ 712 KB