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Carrier density fluctuations in a two-level impurity semiconductor

✍ Scribed by F. M. Klaassen

Publisher
John Wiley and Sons
Year
1962
Tongue
English
Weight
469 KB
Volume
2
Category
Article
ISSN
0370-1972

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✦ Synopsis

Abstract

The general method for the computation of generation‐recombination noise spectra in three‐level systems has been applied to a p‐type semiconductor with a double acceptor (e.g. Zn‐doped Ge) and to a p‐type semiconductor with a center that can accept and donate electrons (e.g. Au‐doped Ge). In both cases the spectrum has been expressed in measurable quantities as carrier densities and relaxation times. Special attention was paid to the temperature range where both impurity levels are active simultaneously in the G–R process.

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The binding energy and wave function of a ground state of a shallow hydrogenic impurity in two-dimensional semiconductors with isotropic and anisotropic effective mass of carriers __m__ ^\*^ = { __m__ ~βŠ₯~, __m__ ~βŠ₯~, __m__ ~||~ } are derived. The calculations are performed by the variational method