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Carrier density distribution in a semiconductor under inhomogeneous illumination

✍ Scribed by Stoica, T. ;Croitoru, N.


Publisher
John Wiley and Sons
Year
1974
Tongue
English
Weight
231 KB
Volume
23
Category
Article
ISSN
0031-8965

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Carrier density fluctuations in a two-le
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## Abstract The general method for the computation of generation‐recombination noise spectra in three‐level systems has been applied to a p‐type semiconductor with a double acceptor (e.g. Zn‐doped Ge) and to a p‐type semiconductor with a center that can accept and donate electrons (e.g. Au‐doped Ge