Hydrogenic impurity in two-dimensional semiconductors with anisotropic energy spectrum of carriers

✍ Scribed by S. P. Andreev; T. V. Pavlova

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 105 KB
• Volume: 2
• Category: Article
• ISSN: 1612-2011
• DOI: 10.1002/lapl.200510048

✦ Synopsis

The binding energy and wave function of a ground state
of a shallow hydrogenic impurity in two-dimensional semiconductors
with isotropic and anisotropic effective mass of carriers m
^*^
= { m
~⊥~, m
~⊥~, m
~||~ } are derived. The
calculations are performed by the variational method based on a
two-parametric trial wave function. The dependence of binding
energy and deformation of an impurity on 2D layer thickness and
effective mass anisotropy parameter m
~⊥~ / m
~||~ is
investigated. The obtained results are in a good agreement with
experimental data and in the limiting cases coincide with the
theoretical calculations of shallow impurity binding energy for
bulk semiconductors [1] and two-dimensional semiconductors
with isotropic effective mass of electrons [2].