Carrier density distribution in modulation doped GaAs-AlxGa1−xAs quantum well heterostructures
✍ Scribed by T.C. Hsieh; K. Hess; J.J. Coleman; P.D. Dapkus
- Publisher
- Elsevier Science
- Year
- 1983
- Tongue
- English
- Weight
- 267 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0038-1101
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## Abstract We discuss the dynamics of the forced modulation‐doped Al~__x__~Ga~1−__x__~As heterostructure device governed by the coupled differential equations, which is operative in the state far from thermodynamic equilibrium. Biased with an appropriate dc field, the system exhibits two states: s
We study inhomogeneous doping effects on the confinement properties of modulationdoped single nonabrupt GaAs/Al x Ga 1-x As quantum wells. We describe the inhomogeneous doping using error function profiles, and we solve self-consistently the coupled Schrödinger (with a position dependent kinetic ene