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Carrier-Concentration Profiles of N-Type Sn and Te Doped Epitaxial GaAs Films

โœ Scribed by Moest, R. R.; Lassota, D. T.

Book ID
127365000
Publisher
The Electrochemical Society
Year
1967
Tongue
English
Weight
221 KB
Volume
114
Category
Article
ISSN
0013-4651

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## Abstract The light absorption below the fundamental energy gap in nโ€type GaAs has been investigated precisely. It is experimentally confirmed that there are the three different mechanisms: (a) the enhancement of fundamental absoption due to the shrinkage of energy gap and band filling by doping