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Investigation of doping profiles and incorporation of Sn and Te in GaAs and inxGa1–xas films grown from thin solution layer

✍ Scribed by Bolkhovityanov, Yu. B. ;Bolkhovityanova, R. I. ;Zembatov, N. B. ;Marchenko, N. E.

Publisher: John Wiley and Sons
Year: 1974
Tongue: English
Weight: 389 KB
Volume: 22
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210220141

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## Abstract In~x~Ga~1−x~As films with __x__⩽0.12 were grown from a thin solution layer between substrates. The calculation of final film thickness as a function of liquid phase composition, based on supposition of film deposition only on the substrate, is in a good agreement with experimental resul