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Investigation of InxGa1−xAs films grown from thin solution layer

✍ Scribed by Dr. Yu. B. Bolchovitianov; H. B. Zembatov

Publisher
John Wiley and Sons
Year
1974
Tongue
English
Weight
839 KB
Volume
9
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

In~x~Ga~1−x~As films with x⩽0.12 were grown from a thin solution layer between substrates. The calculation of final film thickness as a function of liquid phase composition, based on supposition of film deposition only on the substrate, is in a good agreement with experimental results. The dependences between compositions of liquid and solid phases at 800°, 750° and 700°C were determined.

The morphology of the film surface was investigated as a function of liquid phase composition and (100), (111) A, (111) B substrate orientations. Dislocation density increases from 10^4^ cm^−2^ to 10^7^ cm^−2^ with change of x from 0 to 0.12.

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## Abstract The method of GaAs film growth from a solution between two substrates was considered. The calculated thickness as a function of growth temperature and distance between substrates was in a good agreement with experimental results. The investigation of the film roughness as a function o