Carbon nitride films synthesized by electron beam evaporation of carbon and nitrogen ion bombardment

✍ Scribed by P. Petrov; D. Dimitrov; G Beshkov; V. Krastev; S. Nemska; Ch. Georgiev

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 115 KB
• Volume: 52
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(98)00338-8

✦ Synopsis

Carbon nitride thin films deposited on Si(1 0 0) have been synthesized by electron beam evaporation of graphite in nitrogen atmosphere for various N pressures and at different substrate temperatures. The layers were analyzed by X-ray photoelectron spectra, Fourier transforms infrared spectroscopy and Raman spectroscopy. The ratios between carbon and nitrogen concentrations were estimated from XPS spectra. C/N ratio has the value from 0.5 to 1.165. The C 1s XPS core level centered above 286 eV is about 67% of the entire peak. This peak together with the N 1s peak at 400 eV is a feature of the C-N bounds with sp coordination. The peak at 287.4 eV, of about 27% of the area, is considered to be due to sp coordination. N1 s XPS peak at 399 eV is attributed to C"N bonds with sp coordination. The results from XPS analysis were confirmed from Raman and FTIR analysis. Fourier transform IR spectroscopy shows typical C,N IR band centered at about 2150 cm.