Carbon nitride thin films deposited on Si(1 0 0) have been synthesized by electron beam evaporation of graphite in nitrogen atmosphere for various N pressures and at different substrate temperatures. The layers were analyzed by X-ray photoelectron spectra, Fourier transforms infrared spectroscopy an
Carbon nanostructures grown with electron and ion beam methods
β Scribed by P. Lemoine; S.S. Roy; J.P. Quinn; P.D. Maguire; J.A.D. McLaughlin
- Publisher
- Springer
- Year
- 2007
- Tongue
- English
- Weight
- 471 KB
- Volume
- 86
- Category
- Article
- ISSN
- 1432-0630
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## Abstract The structural properties of carbon thin films synthesized under an atmosphere of nitrogen by means of electron beam evaporation were studied by Raman scattering spectroscopy. The electron beam evaporation technique is an important alternative to grown layers of this material with inter
The inΓuence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Γ 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.