𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Carbon nanostructures grown with electron and ion beam methods

✍ Scribed by P. Lemoine; S.S. Roy; J.P. Quinn; P.D. Maguire; J.A.D. McLaughlin


Publisher
Springer
Year
2007
Tongue
English
Weight
471 KB
Volume
86
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Carbon nitride films synthesized by elec
✍ P. Petrov; D. Dimitrov; G Beshkov; V. Krastev; S. Nemska; Ch. Georgiev πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 115 KB

Carbon nitride thin films deposited on Si(1 0 0) have been synthesized by electron beam evaporation of graphite in nitrogen atmosphere for various N pressures and at different substrate temperatures. The layers were analyzed by X-ray photoelectron spectra, Fourier transforms infrared spectroscopy an

Raman shift on n-doped amorphous carbon
✍ Rebollo P., B. ;Freire L., F. ;Lozada M., R. ;Palomino M., R. ;JimΓ©nez S., S. ;Z πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 176 KB

## Abstract The structural properties of carbon thin films synthesized under an atmosphere of nitrogen by means of electron beam evaporation were studied by Raman scattering spectroscopy. The electron beam evaporation technique is an important alternative to grown layers of this material with inter

Ion-beam-induced crystallization of carb
✍ Steffen, Hans Joachim πŸ“‚ Article πŸ“… 1998 πŸ› John Wiley and Sons 🌐 English βš– 501 KB

The inΓ‘uence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Γ‚ 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.