## Abstract Conductive carbon nanowires were made on the polished surface of a single crystal CVD diamond by 30 keV Ga^+^ ion beam focused to 20 nm. Measurements of conductance of the asβirradiated nanowires and those annealed at temperature 1400 Β°C revealed the onset of the ionβinduced conductance
Carbon nanodots made on diamond surface by focused ion beam
β Scribed by Zaitsev, Alexander M. ;Dobrinets, Inga A.
- Book ID
- 105363803
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 245 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
Abstract
Carbon nanodots were made on the polished surface of a single crystal CVD diamond by a focused 30 keV Ga^+^ ion beam. The electrical conductance via the nanodots was measured in two types of structures: single nanodots embedded in the gaps of broken carbon nanowires and linear chains of nanodots. Changes of the conductance with annealing temperature allow to make the conclusion that the size of the electrically conductive area of the nanodots increases from a few nanometers to 20 nm after annealing from 500 to 1000 Β°C. (Β© 2006 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
π SIMILAR VOLUMES
## Abstract We show the growth of hemispherical In nanodots due to differential sputtering by 30 keV gallium (Ga^+^) ions and of InI~3~ nanodots and nanowires due to chemical reactions with iodine on the surface of focused ion beamβirradiated areas on a (100)InP substrate. Growth occurs exclusively