Spontaneous growth of uniformly distributed In nanodots and InI3nanowires on InP induced by a focused ion beam
✍ Scribed by Callegari, Victor ;Nellen, Philipp M.
- Book ID
- 105364302
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 297 KB
- Volume
- 204
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
We show the growth of hemispherical In nanodots due to differential sputtering by 30 keV gallium (Ga^+^) ions and of InI~3~ nanodots and nanowires due to chemical reactions with iodine on the surface of focused ion beam‐irradiated areas on a (100)InP substrate. Growth occurs exclusively on previously FIB‐fabricated nucleation‐sites in the form of craters and trenches. Surface topography and the native oxide on InP are identified as the factors determining the area of growth. Arbitrary 2D patterns can be generated with good control of localization and dimension of the nanostructures. Limitations of size and surface density of the nanodots and nanowires are discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)