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Carbon doping of III–V compounds grown by MOMBE

✍ Scribed by C.R. Abernathy; S.J. Pearton; F. Ren; W.S. Hobson; T.R. Fullowan; A. Katz; A.S. Jordan; J. Kovalchick

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
737 KB
Volume
105
Category
Article
ISSN
0022-0248

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In order to investigate the influence of the substrate polarity and growth conditions on the polarity, GaN was grown on GaAs (111)A-Ga and B-As surfaces with different V/III ratios by metalorganic molecular beam epitaxy (MOMBE). It was found that for GaN grown on GaAs (111)A-Ga surface polarity was