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Carbide contacts on homoepitaxial diamond films

โœ Scribed by Muret, P; Pruvost, F; Saby, C; Lucazeau, E; Nguyen Tan, T.A; Gheeraert, E; Deneuville, A

Book ID
121655660
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
151 KB
Volume
8
Category
Article
ISSN
0925-9635

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## ลฝ . Homoepitaxial diamond films prepared under low CH concentration conditions CH rH -0.15% show atomically 4 4 2 ลฝ 2 . flat surfaces over the whole area 4 = 4 mm of the substrate. Using these diamond films, Schottky contacts between Al and the high-conductivity layer near the surface of as-gro