Spatial uniformity of Schottky contacts between aluminum and hydrogenated homoepitaxial diamond films
✍ Scribed by Daisuke Takeuchi; Sadanori Yamanaka; Hideyuki Watanabe; Hideyo Okushi; Koji Kajimura
- Book ID
- 104309141
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 638 KB
- Volume
- 159-160
- Category
- Article
- ISSN
- 0169-4332
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✦ Synopsis
Ž
. Homoepitaxial diamond films prepared under low CH concentration conditions CH rH -0.15% show atomically 4 4 2 Ž 2 . flat surfaces over the whole area 4 = 4 mm of the substrate. Using these diamond films, Schottky contacts between Al and the high-conductivity layer near the surface of as-grown film have been successfully made with an excellent uniformity with Ž . ideal properties. For example, in the film grown at low CH concentration of 0.016% CH rH , the ideality factor n value 4 4 2 Ž . Ž . and the barrier heights of the Schottky junctions f were close to unity n -1.1 and 1.5-1.6 eV, respectively, for nearly b Ž
. all junctions ) 42 dots prepared on the same film. This result indicates that the quality of the films with atomically flat surfaces over the whole area of the substrate is actually excellent in a viewpoint of chemical stability as well as electrical characteristic.