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Calculations of Radiation-Induced Defect Profiles in CdHgTe Crystals Exposed to Ion Pulses

โœ Scribed by A. V. Voitsekhovskii; A. P. Kokhanenko; S. A. Shul'ga


Book ID
110404654
Publisher
Springer
Year
2002
Tongue
English
Weight
269 KB
Volume
45
Category
Article
ISSN
1573-9228

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A mathematical model to describe processes occurring during the irradiation of semiconductor materials with high power pulsed ion beams is proposed. The model takes account of recombination between vacancies and interstitial atoms and the formation of defect complexes and these processes are analyse