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Ion channeling study of radiation induced defects in a bent silicon crystal

✍ Scribed by G.H. Wang; P.J. Cong; W.M. Gibson; C.R. Sun; I.J. Kim; S. Salman; M. Pisharody; S.I. Baker; R.A. Carrigan Jr; J.S. Forster; I.V. Mitchell

Publisher
Elsevier Science
Year
1983
Weight
256 KB
Volume
218
Category
Article
ISSN
0167-5087

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In this paper an overview on the spectroscopic and spectral hole-burning properties of radiationinduced spectral lines in nitrogen-containing diamonds is given. Special attention has been paid to the defects with the 774 and 813 nm zero-phonon lines that are suitable for room temperature spectral ho