A mathematical model to describe processes occurring during the irradiation of semiconductor materials with high power pulsed ion beams is proposed. The model takes account of recombination between vacancies and interstitial atoms and the formation of defect complexes and these processes are analyse
The calculation of the radiation-defect distribution profiles in mct exposed to powerful pulsed laser beams
✍ Scribed by A. V. Voitsekhovskii; M. Yu. Leonov; S. A. Shul’ga
- Publisher
- Springer
- Year
- 2010
- Tongue
- English
- Weight
- 283 KB
- Volume
- 53
- Category
- Article
- ISSN
- 1573-9228
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