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Calculated temperature distribution during laser annealing in silicon and cadmium telluride

✍ Scribed by R. O. Bell; M. Toulemonde; P. Siffert

Publisher
Springer
Year
1979
Tongue
English
Weight
460 KB
Volume
19
Category
Article
ISSN
1432-0630

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## Abstract Boron diffusion in silicon during the formation of a shallow __p__^+^/__n__ junction has been studied. Low‐energy/high‐dose boron was implanted in germanium preamorphized silicon. Preannealing involving rapid thermal annealing for 10 s, followed by annealing involving non‐melt laser ann