𝔖 Bobbio Scriptorium
✦   LIBER   ✦

C60 films on surface-treated silicon: recipes for amorphous and crystalline growth

✍ Scribed by A.F. Hebard; O. Zhou; Q. Zhong; R.M. Fleming; R.C. Haddon

Book ID
103431996
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
790 KB
Volume
257
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Epitaxial growth of C60 and C70 films on
Epitaxial growth of C60 and C70 films on GaSe (0001) and MoS2 (0001) surfaces
✍ Masatoshi Sakurai; Hirokazu Tada; Koichiro Saiki; Atsushi Koma; Hideyuki Funasak πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 570 KB

Molecular arrangements in CM and C,u films grown epitaxially on GaSe and Moss have been studied by reflection high-energy electron diffraction. C, and C,u molecules were found to form close-packed hexagonal lattices on these substrates with lattice constants of 1.00 LO.02 and 1.08 & 0.02 nm, respect

C 1s ionisation potential and energy ref
C 1s ionisation potential and energy referencing for solid C60 films on metal surfaces
✍ A.J. Maxwell; P.A. BrΓΌhwiler; D. Arvanitis; J. HasselstrΓΆm; N. MΓ₯rtensson πŸ“‚ Article πŸ“… 1996 πŸ› Elsevier Science 🌐 English βš– 514 KB

We present a measurement of the C ls ionisation potential (IP) for solid C60, as well as a reliable determination of the highest occupied molecular orbital (HOMO) IP. The difference between the gas phase and solid state measurements for the HOMO agrees well with theory. We discuss these results with