A new electrolyte (UNIEL) based on HF, NH3F2, C9H14C1N , CH3COOH and o-H3PO 4 has been developed for accurate EC-V net majority carrier concentration profiling of InP-and GaAs-based III-V semiconductors. The new electrolyte was tested with good results on heterostructures containing p-and n-type InP
β¦ LIBER β¦
C-V Profiling of GaAs Using Electrolyte Barriers
β Scribed by M. Kaniewska; I. Slomka
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 267 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0232-1300
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