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C adsorption and diffusion at the Si(0 0 1) surface: implications for SiC growth

✍ Scribed by Giancarlo Cicero; Alessandra Catellani

Book ID
108417525
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
129 KB
Volume
184
Category
Article
ISSN
0169-4332

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Ni films ranging in thickness from 0.4 nm to 50 nm were deposited by evaporation onto terraced SiC (0 0 0 1) substrates at room temperature and annealed at 700 Β°C. The resulting changes in surface composition and morphology were characterized using Auger electron spectroscopy and atomic force micros