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Buried-heterostructure quantum-cascade laser overgrown by gas-source molecular-beam epitaxy

✍ Scribed by Chashnikova, M.; Monastyrskyi, G.; Aleksandrova, A.; Klinkmüller, M.; Semtsiv, M. P.; Masselink, W. T.


Book ID
118218868
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
877 KB
Volume
100
Category
Article
ISSN
0003-6951

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We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1:10 mm and 1:5421:70 mm wavelength region. More