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Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

✍ Scribed by Chung, H. J.; Polyakov, A. Y.; Huh, S. W.; Nigam, S.; Skowronski, M.; Fanton, M. A.; Weiland, B. E.; Snyder, D. W.

Book ID: 121278605
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 688 KB
Volume: 97
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1865317

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