𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Buffer-related gate lag in AlGaN/GaN HEMTs

✍ Scribed by Atsushi Nakajima; Kunitaka Fujii; Kazushige Horio

Book ID
112182409
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
238 KB
Volume
9
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Gate-lag and drain-lag effects in (GaN)/
Gate-lag and drain-lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs
✍ Kuzmik, J. ;Carlin, J.-F. ;Gonschorek, M. ;Kostopoulos, A. ;Konstantinidis, G. ; πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 200 KB

## Abstract Gate and drain‐lag effects are studied in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs grown on sapphire. Electron trapping on the surface states between the gate and the drain forming the net negative charge up‐to ∼2 Γ— 10^13^ cm^–2^ is found to be responsible for the gate‐lag effect in the