Breakdown in a two-layer film of tantalum pentoxide
โ Scribed by G. A. Vorob'ev; V. V. Motoshkin
- Book ID
- 112480943
- Publisher
- Springer
- Year
- 1975
- Tongue
- English
- Weight
- 73 KB
- Volume
- 18
- Category
- Article
- ISSN
- 1573-9228
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๐ SIMILAR VOLUMES
Ta 2 O 5 films with a buffer layer of silicon nitride of various thicknesses were deposited on Si substrate by reactive sputtering and submitted to annealing at 700 ยฐC in nitrogen atmosphere. The microstructure and the electrical properties of thin films were studied. It was found that with a buffer
Ta 2 O 5 ceramics and crystals were prepared and analyzed using Raman spectroscopy in the temperature range 25-873 K. The low-energy phonon bands (n < 100 cm -1 ) of Ta 2 O 5 are assigned to external modes originating from the interaction between different Ta polyhedra and TaO n 5-2n -Ta 6 O 12 6Y c