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Boron passivation and its reactivation in mesoporous silicon: a “chemical” model

✍ Scribed by Garrone, E. ;Geobaldo, F. ;Rivolo, P. ;Salvador, G. P. ;Pallavidino, L. ;Boarino, L. ;Amato, G. ;Giamello, E. ;Chiesa, M. ;Gobetto, R. ;Ugliengo, P.

Book ID
105363157
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
136 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

A chemical model is proposed to explain the passivation of carriers upon etching and their reactivation by the presence of gases in p^+^‐type mesoporous silicon (m‐PS). The model is based on the results obtained by means of FTIR, EPR, NMR spectroscopies and ab‐initio calculations. This chemical description accounts for the behaviour of mPS when contacted with NO~2~ or NH~3~. B atoms in subsurface location play a prominent role. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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