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Boron and silicon coordination in oxide glasses: A statistical mechanical model

✍ Scribed by P.J. Bray; R.V. Mulkern; E.J. Holupka

Book ID
118333113
Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
271 KB
Volume
75
Category
Article
ISSN
0022-3093

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## Abstract A chemical model is proposed to explain the passivation of carriers upon etching and their reactivation by the presence of gases in p^+^‐type mesoporous silicon (m‐PS). The model is based on the results obtained by means of FTIR, EPR, NMR spectroscopies and ab‐initio calculations. This