๐”– Bobbio Scriptorium
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Book review: Modelling the Bipolar Transistor

โœ Scribed by Eades, John


Book ID
114445740
Publisher
Institution of Electrical Engineers
Year
1977
Weight
85 KB
Volume
1
Category
Article
ISSN
0308-6984

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๐Ÿ“œ SIMILAR VOLUMES


Modelling the bipolar transistor
โœ Roulston, D.J. ๐Ÿ“‚ Article ๐Ÿ“… 1979 ๐Ÿ› IEEE ๐ŸŒ English โš– 108 KB
Modeling of the parameters of bipolar tr
โœ V. A. Pilipenko; D. V. Vecher; V. A. Gorushko; T. V. Petlitskaya; V. S. Syakersk ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Springer US ๐ŸŒ English โš– 136 KB
The bipolar spin transistor
โœ Mark Johnson ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 409 KB
Modelling an insulated gate bipolar tran
โœ Kamel Besbes ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 430 KB

Simulators in power electronics are less developed than in other electronic fields. The main modelling methods are between the numerical simulation of semiconductor device equations that hardly simulate circuits, and equivalent circuit models that show poor accuracy. We propose the application of th