An improved non-linear high-frequency model for the bipolar transistor is presented, based on considerations of the dynamics of the charge stored in the base region. The model incorporates higher-order circuit elements in order to obtain increased accuracy in circuit simulation at high frequencies.
β¦ LIBER β¦
Higher-order modelling of the diffusion dynamics in a bipolar transistor
β Scribed by Kari Lehtinen; Markku Sipila; Veikko Porra
- Publisher
- John Wiley and Sons
- Year
- 1991
- Tongue
- English
- Weight
- 794 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0098-9886
No coin nor oath required. For personal study only.
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