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Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistors

✍ Scribed by M. Mouis; H.J. Gregory; S. Denorme; D. Mathiot; P. Ashburn; D.J. Robbins; J.L. Glasper


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
348 KB
Volume
26
Category
Article
ISSN
0026-2692

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