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Bond lengths at buried InAsP/InP interfaces in InP/InGaAs multi quantum wells

✍ Scribed by F. Boscherini; S. Pascarelli; C. Lamberti; S. Bordiga; G.M. Schiavini


Book ID
113284870
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
452 KB
Volume
97
Category
Article
ISSN
0168-583X

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Absorption coefficient and exciton oscil
✍ C. Arena; L. Tarricone; F. Genova; C. Rigo πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 395 KB

The excitonic properties of InGaAs/InP multi-quantum-well systems grown by chemical beam epitaxy have been investigated with absorption measurements in the temperature range 8-300 K and in the spectral region 0.775-1.550 eV. In this region, the excitonic resonances corresponding to n = 1, n = 2 inte